首页> 外文OA文献 >Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

【2h】

Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

机译：氮化铝镓（GaN）/ GaN高电子迁移率晶体管传感器，用于呼出气冷凝物中的葡萄糖检测

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P.; Pearton, Stephen J.;
展开▼
作者单位

展开▼
年度 2010
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
中文文献
专利

1. Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate [J] . Byung Hwan Chu, Byoung Sam Kang, Sheng Chun Hung, Journal of Diabetes Science and Technology . 2010,第1期

机译：氮化铝镓（GaN）/ GaN高电子迁移率晶体管传感器，用于呼出气冷凝物中的葡萄糖检测
2. MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection [J] . Nigam Adarsh, Bhat Thirumaleshwara N., Bhati Vijendra Singh, IEEE sensors journal . 2019,第8期

机译：基于MPA-GSH的功能化AlGaN / GaN高电子迁移率晶体管为基础的镉离子检测传感器
3. MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection [J] . Nigam Adarsh, Bhat Thirumaleshwara N., Bhati Vijendra Singh, IEEE sensors journal . 2019,第8期

机译：MPA-GSH官能化ALGAN / GAN高电子迁移率晶体管基于镉离子检测
4. AlGaN/GaN High Electron Mobility Transistors integrated into Wireless Detection System for Glucose and pH in Exhaled Breath Condensate [C] . B.H. Chu, B.S. Kang, C. Y. Chang, State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50)-and-processes at the semiconductor solution interface 3 . 2009

机译：AlGaN / GaN高电子迁移率晶体管集成到无线检测系统中，用于呼出气冷凝物中的葡萄糖和pH
5. Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors. [D] . Stevens, Lorin E. 2013

机译：AlGaN（氮化镓铝）/ GaN（氮化镓）高电子迁移率晶体管的热压电机械仿真。
6. Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate [O] . Byung Hwan Chu, Byoung Sam Kang, Sheng Chun Hung, 2010

机译：氮化铝镓（GaN）/ GaN高电子迁移率晶体管传感器用于呼出气冷凝物中的葡萄糖检测
7. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein [O] . Hee Ho Lee, Myunghan Bae, Sung-Hyun Jo, 2015

机译：基于alGaN / GaN高电子迁移率晶体管的生物传感器检测C反应蛋白
8. Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. [R] . Nochetto, H. C., Jankowski, N. R., Morgan, B., 2012

机译：结合GaN衬底热边界电阻的氮化镓（GaN）高电子迁移率晶体管（HEmT）器件的混合多栅模型。

Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

著录项

引文网络

相似文献

相关主题

期刊订阅